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| SUM110P04-05 Vishay Siliconix P-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 40 rDS(on) () 0.005 at VGS = - 10 V ID (A)a - 110 Qg (Typ.) 185 nC FEATURES * TrenchFET(R) Power MOSFET RoHS COMPLIANT TO-263 S G Drain Connected to Tab G D S D Ordering Information: SUM110P04-05-E3 (Lead (Pb)-free) P-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 C Continuous Drain Current (TJ = 175 C) TC = 70 C TA = 25 C TA = 70 C Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy TC = 25 C TA = 25 C L = 0.1 mH TC = 25 C Maximum Power Dissipation TC = 70 C TA = 25 C TA = 70 C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg PD IDM IS IAS EAS ID Symbol VDS VGS Limit - 40 20 - 110a - 110a 39b, c 33b, c 240 110 10b, c 75 281 375 262 15b, c 10.5b, c - 55 to 175 260 C W mJ A Unit V THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Case (Drain) Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 40 C/W. Document Number: 73493 S-80274-Rev. B, 11-Feb-08 www.vishay.com 1 t 10 s Steady State Symbol RthJA RthJC Typical 8 0.33 Maximum 10 0.4 Unit C/W SUM110P04-05 Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time Currenta IS ISM VSD trr Qrr ta tb IF = - 20 A, di/dt = 100 A/s, TJ = 25 C IS = - 20 A - 0.8 70 130 37 33 TC = 25 C - 110 - 240 - 1.5 105 200 A V ns nC ns Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf VDD = - 20 V, RL = 0.18 ID - 110 A, VGEN = - 10 V, Rg = 1 f = 1 MHz VDS = - 20 V, VGS = - 10 V, ID = - 110 A VDS = - 25 V, VGS = 0 V, f = 1 MHz 11300 1510 1000 185 48 42 4.0 25 290 110 35 40 440 165 55 ns 280 nC pF Resistancea Forward Transconductancea VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) rDS(on) gfs VGS = 0 V, ID = - 250 A ID = - 250 A VDS = VGS, ID = - 250 A VDS = 0 V, VGS = 20 V VDS = - 40 V, VGS = 0 V VDS = - 40 V, VGS = 0 V, TJ = 55 C VDS 5 V, VGS = - 10 V VGS = - 10 V, ID = - 20 A VDS = - 15 V, ID = - 20 A - 120 0.0041 75 0.005 -2 - 40 - 40 - 5.5 -3 -4 100 -1 - 10 V mV/C V nA A A S Symbol Test Conditions Min. Typ. Max. Unit Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73493 S-80274-Rev. B, 11-Feb-08 SUM110P04-05 Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 200 VGS = 10 thru 7 V 160 I D - Drain Current (A) I D - Drain Current (A) 30 40 6V 120 5V 20 25 C 80 10 40 4V 0 0.0 0 TC = 125 C - 55 C 0.5 1.0 1.5 2.0 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.010 16000 14000 rDS(on) - On-Resistance () 0.008 12000 C - Capacitance (pF) 0.006 VGS = 10 V 0.004 10000 8000 6000 4000 0.002 2000 0.000 0 20 40 60 80 100 120 0 0 Crss Transfer Characteristics Ciss Coss 10 20 30 40 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 10 1.8 ID = 20 A 8 VDS = 20 V 6 VDS = 32 V rDS(on) - On-Resistance (Normalized) 1.5 VGS = 10 V Capacitance V GS - Gate-to-Source Voltage (V) 1.2 4 0.9 2 0 0 40 80 120 160 200 240 0.6 - 50 - 25 0 25 50 75 100 125 150 175 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge Document Number: 73493 S-80274-Rev. B, 11-Feb-08 On-Resistance vs. Junction Temperature www.vishay.com 3 SUM110P04-05 Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 100 rDS(on) - Drain-to-Source On-Resistance () 0.05 0.04 I S - Source Current (A) TJ = 150 C 0.03 TA = 150 C 10 TJ = 25 C 0.02 0.01 TA = 25 C 0.00 1 0.0 0.3 0.6 0.9 1.2 1.5 0 1 2 3 4 5 6 7 8 9 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 1.1 0.9 0.7 VGS(th) Variance (V) 25 Power (W) 0.5 0.3 0.1 - 0.1 - 0.3 - 0.5 - 50 20 15 10 5 ID =10 mA 30 35 On-Resistance vs. Gate-to-Source Voltage TC = 25 C - 25 0 25 50 75 100 125 150 175 0 0.0001 0.001 0.01 0.1 1.00 10 100 1000 TJ - Temperature (C) Time (s) Threshold Voltage 1000 Limited by rDS(on)* Single Pulse Power, Junction-to-Ambient 10 s I D - Drain Current (A) 100 100 s 1 ms 10 Single Pulse TC = 25 C 10 ms 100 ms DC 1 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) *VGS > minimum V GS at which rDS(on) is specified Safe Operating Area, Junction-to-Case www.vishay.com 4 Document Number: 73493 S-80274-Rev. B, 11-Feb-08 SUM110P04-05 Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 240 210 180 I D - Drain Current (A) 150 120 90 Package Limited 60 30 0 0 25 50 75 100 125 150 175 100 50 0 25 50 75 100 125 150 175 400 350 300 Power (W) 250 200 150 TC - Case Temperature (C) TC - Case Temperature (C) Max. Avalanche and Drain Current vs. Case Temperature* 1 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 Power Derating, Junction-to-Case 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 Square Wave Pulse Duration (s) 0.1 1 Normalized Thermal Transient Impedance, Junction-to-Case * The power dissipation PD is based on TJ(max) = 175 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73493. Document Number: 73493 S-80274-Rev. B, 11-Feb-08 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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